Evidence of the Meyer-Neldel rule in InGaAsN alloys and the problem of determining trap capture cross sections
Identifieur interne : 00C111 ( Main/Repository ); précédent : 00C110; suivant : 00C112Evidence of the Meyer-Neldel rule in InGaAsN alloys and the problem of determining trap capture cross sections
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Abstract
Deep-level transient spectroscopy measurements have been performed on the quaternary semiconductor InGaAsN. A series of as-grown and annealed metalorganic chemical-vapor-deposited and molecular-beam-epitaxy samples with varying composition were studied. We observed a deep hole trap with activation energy ranging between 0.5 and 0.8 eV in all samples. The data clearly obey the Meyer-Neldel rule (MNR) with an isokinetic temperature of 350 K. We show that great care must be used in extracting capture cross sections (σ) from materials that obey the MNR. In fact, we argue that it is probably not possible to determine σ from the detrapping rate alone. One must measure both trapping and detrapping rates. © 2003 American Institute of Physics.
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A series of as-grown and annealed metalorganic chemical-vapor-deposited and molecular-beam-epitaxy samples with varying composition were studied. We observed a deep hole trap with activation energy ranging between 0.5 and 0.8 eV in all samples. The data clearly obey the Meyer-Neldel rule (MNR) with an isokinetic temperature of 350 K. We show that great care must be used in extracting capture cross sections (σ) from materials that obey the MNR. In fact, we argue that it is probably not possible to determine σ from the detrapping rate alone. 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